The present study investigates how temperature relates to the performance of AlGaAs/GaAs nano-HEMTs. Critical parameters such as Av, gds, gm, TGF and GBW are evaluated to establish amplifier efficiency while testing RF characteristics, including Cgs, Cgd, ft, fmax, GFP, TFP and GTFP using on-wafer measurements at different temperatures. The results suggest that the effect of temperature on gm, Av, Cgd, ft, fmax, GBW, GFP, TFP and GTFP is negative, while gds, TGF, Cgs and time delay increase with the increase in temperature. Although these variations arise from thermal effects on the transistor, it still functions efficiently for RF applications, indicating its ability to operate reliably at high temperatures.
